Transparent conducting Sno2:F thin films for sis solar cells

Abstract

Chemical vapour deposition has been used transparent conducting tin oxide thin films. useful for solar energy applications. to deposit The films are electrical properties have been investigated. Optical and Direct and indirect bandgap values of tin oxide films have been found to be 3.55 and 3.19 eV respectively. Transmission in the visible region of the spectrum was about 85%. Preparation of Fluorine doped tin oxide films is also presented. The sheet resistance obtained is 50n per square. An attempt was made to fabricate Sn02:F/Si02/p-Si solar cell which yielded an open circuit voltage of 0.25 V, short circuit current density of 556~A/cm2, fill factor of 2 0.23 and efficiency of 0.04% under 80mW/cm insolation. The low efficiency can be attributed to high series resistance, mismatch of work function and possibly thick interfacial oxide layer.