Analysis of Root Mean Square Roughness of Microcrystalline Silicon Thin Films Using Scanning Probe Image Processor software
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Date
2012Author
Nyangonda, TN
Mulati, DM
Aduda, BO
Type
ArticleLanguage
enMetadata
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Electron transport and recombination has been investigated in dye-sensitized electrochemical solar cells
at varying Ti02 film thickness using experimental electrochemical potential technique. Photocurrent
transients resulting from small-amplitude square wave modulation of the incident light were analyzed,
and the effect of illumination intensity and film thickness studied. Photovoltage decay measurements
were studied on solar cells when switched from short-circuit and under illumination to open circuit and
dark at varying illumination intensity for different film thickness. The analysis was done for varying film
thickness at constant illumination intensity and varying illumination intensity at constant film thickness.
The varying film thicknesses in this study were 3.0 um, 6.0 urn, 12.8 urn, 23.5 urn and 25.3 urn while
illumination intensities were 0.5, 1.2, 2.4, 5.1, 9.0 and 15.6 rnwcrn", The voltage decay measured
(known as open circuit voltage, Vsc) was seen to first rise to a maximum value then followed by decay.
The maximum Vsc (Vsc, max) increased with film thickness at constant prior illumination. On the other
hand, Vsc, max was found to depend on the prior illumination and exhibited logarithmic increase with light
intensity. The time (tmax) to attain Vsc, max varies exponentially with light intensity and closely matches the
electron transport time measured by photocurrent decay measurements.
Citation
International Conference ofNano Science and Technology (ICNT-I2): 23-27 July, 2012, Paris-FrancePublisher
University of Nairobi, Physics Department, Jomo Kenyatta University of Agriculture and Technology, Physics Department