Ch a r a c terization of SnxSeylSn02:Co P-N Junction Deposited by Spray Pyrolysis for Photovoltaic Application

Abstract

SC-,1ICil f('r semiconducting materials for photovoltaic application has attracted a lot of attention rccern l, This research will involve characterization of Sn.Se.: S1102-Co P-N as a solar cell material. SnSe is Ci I' type semiconductor with a direct band gap and high absorption in the visible region spectrum Cobah doped rin oxide is not only a direct band gap semiconductor but also has a wide band gap and high uansrmnanc e. Solar cells making use either of the two materials have been fabricated and have aclne , ed good efficiencies. A solar cell using the two materials for a P-N junction is yet to be fabricated In ihi. research Co-doped Sn02 and SnSe thin films will be deposited on glass substrates using spray pyrol: s is iec luuquc The precursor solution will be prepared by dissolving 0.025 M of stannic chlt'rllk (SIlLI~:,J l-O) and different amounts of cobalt nitrate o-hydrate (Co (NO;)2:6H20) and J - J dime'lll: I sekIH,tIIL'(I CHsN2Se. Different thin films such as Sn02: CO-SIl02: SnSe and Co-SnO]: Snxe \\ill he rl'eP,IICJ Optical properties of thin films will be characterized i.e. absorbance spectra, transrn iuance and rc llcct anc e w ith LJV-VIS-NIR spectrophotometer and the band gap of the films will be ana lysed by use 01 scout -ofrware. Electrical characterization especially sheet resistivity \ViII be measured using the Iou: point probe method. Thin films with optimum properties will be used at fabricated a P-N junction lillOlIgh double deposition. I-V characteristics of the junction will be done using. Keithley 2400 source meter and a computet. Fill factor (FF), open circuit voltage (Voc), and efficiency of tile junction wil] be obtained