• Login
    • Login
    Advanced Search
    View Item 
    •   UoN Digital Repository Home
    • Conference/ Workshop/ Seminar/ Proceedings
    • Faculty of Science & Technology (FST)
    • View Item
    •   UoN Digital Repository Home
    • Conference/ Workshop/ Seminar/ Proceedings
    • Faculty of Science & Technology (FST)
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Deposition and Characterization of CuAlxBx Se2 Thin Film Deposited by DC-RF Co-sputtering for PhotovoItaic Application

    Thumbnail
    View/Open
    Abstract (543.3Kb)
    Date
    2012
    Author
    Simiyu, J
    Musembi, R.J
    Mwabora, M
    Kanmja, P.K
    Njoroge, V
    Wangati, CX
    Metadata
    Show full item record

    Abstract
    Solar cell has the potential of being the m am drive to economic prosperity as it is one of the mo-t promising sources of cheap, environmentally friendly and renewable energy. Crystalline silicon based technology currently dominate the solar energy market. However, it is generally expensive and the lell efficiency has reached 24.7% hence approaching theoretical expected maximum of 30%. In CIrcler 1" reduce cost of production, focus is shifting towards thin film based I-Tll-VI family chalcopyrite compounds where cheaper Culn.Ga..Se- absorber semiconductor is reponed to have attained tile highest efficiency of 20.3 % This study intends to fabricate and characterize a compound of copper. aluminum, boron and selenium (CuAI,BI_, Se2) thin film. The compound is based on J-TlJ-I\!family of chalcopyrite which has generated a lot of interest as an absorber material for solar cells due to their high absorption coefficients The research procedure will involve deposition of CuAI,BI.,Se2 thin film by DC and RF magnetron sputtering of CuA IB alloy and selenium targets respectively The deposition is done using Edwards Auto 360 RF and DC magnetron \3CULIIll system. Characterization of the resulting thin film based on structural and optoelectronic properties is done using X-Ray diffraction (XED), X-R;I> photoelectron spectroscopy CAPS), Scanning Electron microscopy (SEM), UV-Visible-JR Spectrometer. and the Hall Effect. The outcome of this research will provide fundamental practical science and engineering knowledge base on structural and optoelectronic properties ofCuAI.,B1., See c ornpouud os solar absorber material among other optoelectronic applications. In general the study will contribute towards achieving greater efficiency in production ofvgre en" energy.
    URI
    http://hdl.handle.net/11295/66056
    Citation
    Deposition and Characterization of CuAlxB]_x Se2 Thin Film Deposited by DC-RF Co-sputtering for PhotovoItaic Application c.x. Wangati1, \V. Njoroge2, P.K. Kanmja\ J.M. Mwabora", R.J. Musern bi", J. Simiyu ' 'Deparunent of Technical and Applied Sciences, Technical University of Kenya, P.O. Box 52~28-00200, Nairobi, Kenya. cOepanment of Physics, Kenyarta University, P.O. Box 43844 GPO Nairobi- Kenya ;Depal1ment of Physics, Jomo Kenyatta University of Agriculture and Technology, P.O. Box 6200()00200 'Depanment of Physics, University of Nairobi. PO. Box 30197- 00100 GPO Nairobi-K
    Collections
    • Faculty of Science & Technology (FST) [853]

    Copyright © 2022 
    University of Nairobi Library
    Contact Us | Send Feedback

     

     

    Useful Links
    UON HomeLibrary HomeKLISC

    Browse

    All of UoN Digital RepositoryCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

    My Account

    LoginRegister

    Copyright © 2022 
    University of Nairobi Library
    Contact Us | Send Feedback