Metallic Cu and In Films deposited by d.c. magnetron sputtering

Abstract

Cu and In fims have been deposited by direct current (d.c.) magnetron sputtering on glass substrates under different deposition conditions. Deposition temperature, partial pressure in the vacuum chamber, and thickness have been found to be the most critical parameters for achieving low resistivity films. Resistivity of In films was found to be more sensitive to deposition parameters than for Cu films. For the deposition parameters studied in this work, changes in the resistivity of Cu films are of the order of 101, compared to In film resistivity changes of order of 101 to 1011.