| dc.contributor.author | MWABORA, JM | |
| dc.contributor.author | KIVAISI, RT | |
| dc.date.accessioned | 2013-06-13T12:31:52Z | |
| dc.date.issued | 2001 | |
| dc.identifier.citation | JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS 12 (2001) 75-80 | en |
| dc.identifier.uri | http://erepository.uonbi.ac.ke:8080/xmlui/handle/123456789/33097 | |
| dc.description.abstract | Cu and In fims have been deposited by direct current (d.c.) magnetron sputtering on glass
substrates under different deposition conditions. Deposition temperature, partial pressure in
the vacuum chamber, and thickness have been found to be the most critical parameters for
achieving low resistivity films. Resistivity of In films was found to be more sensitive to
deposition parameters than for Cu films. For the deposition parameters studied in this work,
changes in the resistivity of Cu films are of the order of 101, compared to In film resistivity
changes of order of 101 to 1011. | en |
| dc.language.iso | en | en |
| dc.publisher | Kluwer Academic Publishers | en |
| dc.title | Metallic Cu and In Films deposited by d.c. magnetron sputtering | en |
| dc.type | Article | en |
| local.publisher | Department of Physics, University of Dar es Salaam, | en |
