dc.contributor.author | Munguti LK. | |
dc.contributor.author | Njoroge Walter. | |
dc.contributor.author | Musembi Robinson J. | |
dc.date.accessioned | 2013-07-02T11:50:50Z | |
dc.date.available | 2013-07-02T11:50:50Z | |
dc.date.issued | 02-07-13 | |
dc.identifier.citation | Munguti, L. K., Njoroge, W., & Musembi, R. J. (2013). ZnO: Sn deposition by reactive evaporation: Effects of Sn doping on the electrical and optical properties. | |
dc.identifier.uri | http://erepository.uonbi.ac.ke/bitstream/handle/11295/44013/FULL%20TEXT.pdf?sequence=1&isAllowed=y | |
dc.description.abstract | Tin doped zinc oxide thin films were deposited by reactive evaporation under various tin doping levels ranging from 1% to 8%. The deposition was done using Edwards Auto 306 coating unit at room temperature (25°C) and 5.0 x 10-5 mbar of chamber pressure. The optical transmittance spectra was obtained using UV-Vis-NIR spectrophotometer 3700 DUV in the visible wavelength 380-750nm. The doped films showed high transmittance >75% although slightly lower than that of undoped films. The band gap ranged from 2.95-3.95eV with the lowest value been attained at 4% tin doping. For the electrical characterization, sheet resistivity was carried using the four point probe at room temperature (25°C). The sheet resistivity ranged from 24.3-26.7Ωcm although it decreased with increase in doping concentration. | en |
dc.language.iso | en | en |
dc.title | ZnO:Sn deposition by reactive evaporation: Effects of Sn doping on the electrical and optical properties | en |
dc.type | Working Paper | en |