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dc.contributor.authorMunguti LK.
dc.contributor.authorNjoroge Walter.
dc.contributor.authorMusembi Robinson J.
dc.date.accessioned2013-07-02T11:50:50Z
dc.date.available2013-07-02T11:50:50Z
dc.date.issued02-07-13
dc.identifier.citationMunguti, L. K., Njoroge, W., & Musembi, R. J. (2013). ZnO: Sn deposition by reactive evaporation: Effects of Sn doping on the electrical and optical properties.
dc.identifier.urihttp://erepository.uonbi.ac.ke/bitstream/handle/11295/44013/FULL%20TEXT.pdf?sequence=1&isAllowed=y
dc.description.abstractTin doped zinc oxide thin films were deposited by reactive evaporation under various tin doping levels ranging from 1% to 8%. The deposition was done using Edwards Auto 306 coating unit at room temperature (25°C) and 5.0 x 10-5 mbar of chamber pressure. The optical transmittance spectra was obtained using UV-Vis-NIR spectrophotometer 3700 DUV in the visible wavelength 380-750nm. The doped films showed high transmittance >75% although slightly lower than that of undoped films. The band gap ranged from 2.95-3.95eV with the lowest value been attained at 4% tin doping. For the electrical characterization, sheet resistivity was carried using the four point probe at room temperature (25°C). The sheet resistivity ranged from 24.3-26.7Ωcm although it decreased with increase in doping concentration.en
dc.language.isoenen
dc.titleZnO:Sn deposition by reactive evaporation: Effects of Sn doping on the electrical and optical propertiesen
dc.typeWorking Paperen


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